Invited Book Chapters

I7. Y. Rosenwaks, G. Elias, E. Strasbourg, A. Schwarzman, and A. Boag, "The effect of the measuring tip and image reconstruction", in press.

I6. Y. Rosenwaks, A. Schwarzman, E. Lepkifker, and A. Boag, “Kelvin Probe Force Microscopy, Principles and Recent Applications”, in “Applied Scanning Probe Methods VIII” , Edited by  B. Bhushan, H. Fuchs, and S. Hosaka, Springer  Verlag 2007, pages (351-376).

I5. Y. Rosenwaks, S. Saraf, O. Tal, A. Schwarzman, Th. Glatzel and M.Ch. Lux-Steiner, “Kelvin Probe Force Microscopy of Semiconductors”, in "Scanning Probe Microscopy: Electrical and Electromechanical" Phenomena at the Nanoscale Vol II, pages (663-689) Springer Verlag 2006.

I4. Th. Glatzel, M.Ch. Lux-Steiner, E. Strasbourg, A. Boag, and Y. Rosenwaks, “Principles of Kelvin Probe Force Microscopy”, in "Scanning Probe Microscopy: Electrical and Electromechanical Phenomena at the Nanoscale" Vol II, pages (113-131) Springer Verlag 2006.

I3. G. Rosenman, A. Agronin, D. Dahan, M. Shvebelman, E. Weinbrandt, M. Molotskii, and Y. Rosenwaks, “Ferroelectric Domain Breakdown: Application to Nanodomain Technology”, in “Polar Oxides-Properties, Characterization and Imaging, B. Waser, and Tiedke (Eds.) Wiley-VCH, Germany 2005, pages (189-220).

I2. Y. Rosenwaks, M. Molotskii, A. Agronin, P.Urenski, M. Shvebelman, and G. Rosenman,  “Nanodomain Engineering in Ferroelectric Crystals Using High Voltage Atomic Force Microscopy”, in "Nanoscale Characterization of Ferroelectric Materials", M. Alexe and   Alexei Gruverman (eds), Springer Verlag, Heidelberg 2004, pages (221-265).

I1. Y. Rosenwaks, and R. Shikler, “Nanoscale electronic measurements of semiconductors using kelvin  probe force microscopy” in “Scanning Probe Microscopy: Characterisation, Nanofabrication and Device Application of Functional Materials”, Vilarinho, Paula Maria; Rosenwaks Yossi; Kingon Angus (Eds.), NATO Science Series II: Mathematics, Physics and Chemistry, Vol.  186, 2005, Kulwer Academic Publishers, pages (119-151).

Edited Books

EB2. “Scanning Probe Microscopy: Characterization, Nanofabrication and Device Application of Functional Materials”, NATO Science Series II: Mathematics, Physics and Chemistry, Vol.  186, Vilarinho, Paula Maria; Rosenwaks, Yossi; Kingon, Angus (Eds.) Kulwer Academic Publishers, (2005).

EB1. “Advanced characterization of semiconductors materials”, edited by Y. Rosenwaks, V. Raineri, and W. Vandervost, (Eds.), Elsevier Science Ltd., Oxford (2003)

Edited Journal

EJ1. Guest editor of a special issue of Israel Journal of Chemistry on "Scanning Probe Microscopy",  Vol. 48, No. 2, (2008).

Invited Review Articles

R2. M. Molotskii, Y. Rosenwaks, and G. Rosenman, “Ferroelectric Domain Breakdown” Annual Review of Materials Research Volume 37, 272-296, 2007. 

R1. O. Tal and Y. Rosenwaks, “Electronic Properties of Doped Molecular Thin Films Studied by Kelvin Probe Force Microscopy”, J. Phys. Chem. B 110, 25521-4, 2006. Festschrift for Arthur J. Nozik 70th Birthday, . 

In Press

J97. II. Zhbova, M. Molotskii, Z. Barkay, J. Marczewski, G. Meshulam,E. Grunbaum, and Y. Rosenwaks, "Secondary electron doping contrast: Theory based on HRSEM and KPFM Measurements", J. Appl. Phys.

J96. S. Shusterman, A. Reizman, A. Sher, Y. Paltiel, , A. Schwarzman, O. Azriel, A. Boag, Y. Rosenwaks, and P. L. Galindo “ Two Dimensional Imaging of Strain and Composition Induced Confinement Potential in III-V Quantum Dots ”, Europhys. Lett.

Papers

J95. E. Koren, N. Berkovich, J. E. Allen, L. Lauhon, and Y. Rosenwaks,  "Non-uniform doping distribution along Silicon nanowires measured by Kelvin Probe Force Microscopy and Scanning Photocurrent Microscopy", Appl. Phys. Lett. 95, 92105-7, (2009).

J94. E. Halpren, B. Khamaisi, O. Shaya, G. Shalev, A. Doron, I. Levy, and Y. Rosenwaks, " Electrostatic Properties of Silane Monolayers in an Electrolytic Environment", J. Phys. Chem. C 113, 16802-6, (2009).

J93. Lior Sepunaru, Irena Tsimberov, Ludmila Forolov, Chanoch Carmeli , Itai Carmeli, and Yossi Rosenwaks, " Picosecond Electron Transfer From Photosysnthetic Reaction Center Protein to GaAs ", Nanoletters, 9, 2751-5,  (2009).

J92. Shalev G., Halpern E., Doron A, Virobnik U., Cohen A., Sanhedrai Y., Rosenwaks Y. and Levy I.,  " Surface chemical modification induces nanometer scale electron confinement in field effect device"., J. Chem. Phys. 131 024702-6 (2009).

J91. A. Rozenblat, Y. Rosenwaks, and H. Cohen, " Hot-Electron Characteristics in Chemically Resolved Electrical Measurements of Thin Silica and SiON Layers",  Appl. Phys. Lett. 94, 213501-3, (2009). 

J90. Praneet Adusumilli, Lincoln J. Lauhon, David N. Seidman, Conal E. Murray, Ori Avayu, and Yossi Rosenwaks , "Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni 0.95Pt0.05/Si (100) thin films", Appl. Phys. Lett. 94, 113103-5, (2009).

J89. Praneet Adusumilli, Conal E. Murray, Lincoln J. Lauhon, David N. Seidman, , Ori Avayu, and Yossi Rosenwaks, " Three-Dimensional Atom-Probe Tomographic Studies of Nickel Monosilicide/Silicon Interfaces on a Subnanometer Scale", ECS Transactions, 19, 303-314 (2009).

J88. O. Shaya, M. Shaked, Y. Usherenko, E. Halpern, A. Doron, A. Cohen, I. Levy, and Y. Rosenwaks, "Tracing the Mechanism of Molecular Gated Transistors", J. Phys. Chem. C, 113, 6163-8, (2009).

J87. A. Rozenblat, Y. Rosenwaks, L. Segev, and H. Cohen, "Electrical Depth Profiling in Thin SiON Layers", Appl. Phys. Lett. 94, 053116-8 , (2009).

J86. O.Shaya, M.Shaked, A. Doron, A. Cohen, I. Levy, and Y. Rosenwaks, “Distinguishing between Dipoles and Field Effects in Molecular Gated Transistors”, Appl. Phys. Lett.,93, 043509-11, (2008).

J85. M.Shaked, O.Shaya, A. Doron, A. Cohen, I. Levy, and Y. Rosenwaks, “Electrostatics Properties of Molecular Gated BioFETS”, Proc. of 2008 International Symp. on Industrial Electronics, Cambridge.

J84. O. Tal, I. Epstein, O. Baboor, C. K. Chan, A. Kahn, Y. Ganot, N. Tessler and Y. Rosenwaks, “Measurements of the Einstein Relation in doped and undoped Molecular Thin Films”, Phys. Rev. B, Rapid Comm., 77, 201201-4, (2008).

J83. Ludmila Frolov, Yossi Rosenwaks, Shachar Richter, Chanoch Carmeli and Itai Carmeli, "Photoelectric Junctions Between GaAs and Photosynthetic Reaction Center Protein", J. Phys. Chem C. 112, 13426-13430, (2008).

J82. I. Magid, L. Burstein, O. Seitz, L. Segev, L. Kronik, and Y. Rosenwaks, “Electronic characterization of alkyl self assembled monolayer on silicon (100) using Kelvin probe force microscopy”, J. Phys. Chem. C. 112, 7145-7150, (2008).

J81. S. Yogev, Y. Levine, M. Molotskii, and Y. Rosenwaks, “Charging of thin dielectric Films Following Focused Ion Beam Irradiation”, J. Appl. Phys. 103, 64107-64112, ( 2008).

J80. S. Shusterman, A. Reizman, Y. Paltiel, A. Sher, A. Schwarzman, E. Lepkifker and Y. Rosenwaks, “ Nanoscale Composition and Strain Mapping of  Nanocrystals Using Kelvin Probe Force Microscopy”, Nanoletters, 7, 2089-2093 (2007).

J79. D. Dahan, M. Molotskii, G. Rosenman, and Y. Rosenwaks, “Nanoscale Ferroelectric Domain Reversal: The Role of Humidity”, Appl. Phys. Lett., 89 152902 (2006).

J78. S. Shusterman, Y. Paltiel, A. Sher, V. Ezersky, and Y. Rosenwaks, “High Density Nanometer Scale InSb Dots Formation Using Droplets Heteroepitaxial Growth by MOVPE”, J. Crystal Growth, 291, 363-9 (2006).

J77. A. Agronin, M. Molotskii, Y. Rosenwaks, G. Rosenman, B. J. Rodriguez, A. I. Kingon, and A. Gruverman, “Dynamics of Ferroelectric Domain Growth in the Field of Atomic Force Microscope”, J. Appl. Phys., 99104102-6 (2006).

J76. A. Agronin, Y. Rosenwaks, and G. Rosenman “Direct observation of pinning centers in ferroelectrics”, Appl. Phys. Lett., 88072911-3(2006).

75. O. Tal, Y. Preesant, C. K. Chan, Y. Roichman, A. Kahn, N. Tessler and Y. Rosenwaks, “Threshold voltage as a measure of molecular level shift in organic thin film transistors”, Appl. Phys. Lett.,  88 43509-11 (2006).

J74. S. Saraf, A. Schwarzman, Y. Dvash, S. Cohen, D. Ritter and Y. Rosenwaks, “Nanoscale Measurement of the Energy Distribution of Semiconductor Surface States”, Phys. Rev. B., 73 35336-42 (2006).

J73. O. Tal, N. Tessler, C. K. Chan, A. Kahn, and Y. Rosenwaks, “Direct determination of the hole density of states in undoped and doped amorphous organic films with high lateral resolution”, Phys. Rev. Lett., 95 256405-8 (2005).

J72. Ludmila Frolov, Parag Chitnis, Yossi Rosenwaks, Chanoch Carmeli, and Itai Carmeli, “Fabrication of Photo-Electronic Device by Direct Chemical Binding of the Photosynthetic Reaction Center Protein to Metal Surfaces”, Adv. Mat. 17, 2434-7, (2005).

J71. A. Schwarzman, E. Grunbaum, E. Strasburg, E. Lepkifker, A. Boag, Th. Glatzel, Z. Barkay, M. Mazzer, K. Barnham, and Y. Rosenwaks, “Nanoscale Potential Distribution across Multi-Quantum Well Structures: Kelvin Probe and Secondary Electron Imaging”, J. Appl. Phys. 98, 84310-4, (2005).

J70. E. Strassburg, A. Boag, and Y. Rosenwaks, “Reconstruction of Electrostatic Force Microscopy Images”, Rev. Sci. Inst., 76, 83705-10, (2005).

J69. O. Tal, Y. Rosenwaks, Y. Roichman, N. Tessler, C. K. Chan and A. Kahn, “Nanoscale Measurements of Electronic Properties in Organic Thin Film Transistors”. MRS Proceedings, Organic Thin-Film Electronics, I4.5, 871E, (2005).

J68. S. Saraf, M. Molotskii, and Y. Rosenwaks “Local Measurement of Surface States Energy Distribution in Semiconductors Using Kelvin Probe Force Microscope”, Appl. Phys. Lett., 86, 172104-6 (2005).

J67. A. Agronin, M. Molotskii, Y. Rosenwaks, E. Strassburg, A. Boag, S. Mutchnik, and G. Rosenman, “Nanoscale Piezoelectric Coefficient Measurements in Ionic Conducting Ferroelectrics”, J. Appl. Phys., 97, 84312-6, (2005).

J66. S. Saraf and Y. Rosenwaks, “Local Measurement of Semiconductor Band Bending and Surface Charge Using Kelvin Probe Force Microscopy”, Surf. Sci. Letters.,  574 L35-L39, (2005).

J65. Y. Rosenwaks, D. Dahan, M. Molotskii, and G. Rosenman, “Ferroelectric domain engineering using atomic force microscopy tip arrays in the domain breakdown regime”, Appl. Phys. Lett., 86, 12909-12911, (2005).

J64. O. Tal, Weiying Gao , Calvin K. Chan , Antoine Kahn , and Y. Rosenwaks, “Measurement of interface potential change and space charge region across metal/organic/metal layered structures using Kelvin probe force microscopy”, Appl. Phys. Lett., 85, 4148-4150 (2004).

J63. A. Agronin, Y. Rosenwaks, and G. Rosenman, “Ferroelectric Domain Reversal in LiNbO3 Crystals Using High Voltage Atomic Force Microscopy”, Appl. Phys. Lett., 85, 452-4, (2004).

J62. Y. Rosenwaks, Th. Glatzel, S. Sadewasser, and R. Shikler, “Kelvin Probe Force Microscopy of Semiconductor Surface Defects”, Phys. Rev. B., 70, 085320-7  (2004).

J61. S. Moscovich, A. Arie, R. Urneski, A. Agronin, G. Rosenman and Y. Rosenwaks “Non-collinear second harmonic generation in sub-micron-poled RbTiOPO4”, Optics Express, 12, 2236-42 (2004).

J60. N. Duhayon, P.Eyben, M. Fouchier, T. Clarysse, W. Vandervorst, D.Álvarez, S. Schoemann, M.Ciappa, M. Stangoni, P. Formanek, V. Raineri, F. Giannazzo, D. Goghero, Y. Rosenwaks, R. Shikler, S. Saraf, S. Sadewasser, N. Barreau, T. Glatzel, M. Verheijen, S.A.M. Mentink, R. Wiesendanger, M. Von Sprekselen, T. Maltezopoulos, L. Hellemans, ”Assessing the performance of two dimensional dopant profiling techniques”, J. Vac. Sci. Tech., B 22, 385-393 (2004).

J59. Y. Rosenwaks, H. Gero, I. Tsimberova, and M. Molotskii, “Minority Carrier Recombination in p-InP Single Crystals”, Phys. Rev. B. 68, 115210-20, (2003).

J58. Th. Glatzel, S. Sadewasser, R. Shikler, Y. Rosenwaks, and M. Ch. Lux-Steiner, “Kelvin Probe Force Microscopy on III-V Semiconductors: The Effect of Surface Defects on the Local Work Function”, Mate. Sci. and Eng. B., 102, 138-142, (2003).

J57. I. Tsimberova, M. Molotskii, and Y. Rosenwaks, “Minority Carrier Recombination in n-InP”, J. Appl. Phys., 93, 9797-9802, (2003).

J56. Y. Rosenwaks, Michel Molotskii, Alex Agronin, Pavel Urenski, and Gil Rosenman, “High Voltage Atomic Force Microscopy: A New Technology for Nanoscale Optical Devices”, Proceedings of SPIE, 58, 213-220 (2003).

J55. G. Rosenman, P. Urenski, A. Agronin, A. Arie and Y. Rosenwaks, “Nanodomain Engineering in RbTiOPO4 Ferroelectric Crystals”, Appl. Phys. Lett., 82, 3934-6(2003).

J54. S. Sadewasser, Th. Glatzel, R. Shikler, Y. Rosenwaks, and M. Ch. Lux-Steiner, “Resolution of Kelvin Probe Force Microscopy in Ultrahigh Vacuum: Comparison of Experiment and Simulation”, Appl. Surf. Sci., 210, 232-236, (2003).

J53. A. Agronin, Y. Rosenwaks, and G. Rosenman, “Piezoelectric Coefficient Measurements in Ferroelectric Single Crystals Using High Voltage Atomic Force microscopy”, Nanoletters, 3, 169-171, (2003).

J52. M. Molotskii, P. Urenski, A. Agronin, M. Shvebelman, G. Rosenman, and Y. Rosenwaks “Ferroelectric Domain breakdown”, Phys. Rev Lett, 90, 107601-4, (2003).

J51. G. Rosenman, P. Urenski, A. Agronin, Y. Rosenwaks and M. Molotskii, “Submicron Ferroelectric Domain Structures Tailored by High Voltage Scanning Probe Microscopy”, Appl. Phys. Lett., 82, 103-5 (2003).

J50. G. Lubarsky, R. Shikler, N. Ashkenasy, and Y. Rosenwaks “Quantitative Evaluation of Local Charge Trapping in Dielectric Stacked Gate Structures using Kelvin Probe Force Microscopy”, J. Vac Sci. Tech., B20(5), 1914-1917, (2002).

J49. S. Saraf, R. Shikler, and Y. Rosenwaks, “Microscopic Surface Photovoltage Spectroscopy”, Appl. Phys. Lett., 80, 2586-8 (2002).

J48. M. Shvebelman, A. Agronin, P. Urenski, Y. Rosenwaks, and G. Rosenman, “Kelvin Probe Force Microscopy of Periodically Poled Ferroelectric Domain Structure in KTiOPO4 Crystals”, Nanoletters, 2, 455-8, (2002).

J47. M. Shvebelman, P. Urenski, R. Shikler, G. Rosenman, M. Molotskii, and Y. Rosenwaks, “Scanning Probe Microscopy of Well-Defined Periodically Poled Ferroelectric Domain Structure”, Appl. Phys. Lett., 80, 1806-9 (2002).

J46. Ruzin, N. Croitoru, G. Lubarsky, and Y. Rosenwaks, “Nanoscale potential profiles of silicon particle detectors measured by atomic force microscopy”, Nuclear Instruments and Methods in Physics Research A 461, 229-232 (2001).

J45. P. Urenski, M. Lesnykh, Y. Rosenwaks, G. Rosenman, and M. Molotskii, “Anisotropic Domain Structure of KTiOPO4 Crystals”, J. Appl. Phys., 90, 1950-1954 (2001).

J44. N. Ashkenasy, M. Leibovitch, Y. Rosenwaks, Y. Shapira, "Characterization of quantum well structures using surface photovoltage spectroscopy", Mater. Sci. and Eng., B 74, 125, (2000).

J43. R. Shikler, and Y. Rosenwaks, “Near-Field Surface Photovoltage”, Appl. Phys. Lett., 77, 836-839, (2000).

J42. R. Shikler, T. Meoded, N. Fried, and Y. Rosenwaks, “Measuring Minority-Carrier Diffusion Length using a Kelvin Probe Force Microscope”, Phys. Rev. B., 61, 11041-11046, (2000).

J41. S. Solodky, M. Leibovitch, N. Ashkenasy, Y. Rosenwaks, I. Hallakoun, Y. Shapira
"Detailed Characterization Methodology for Pseudomorphic High Electron Mobility Transistor Using Surface Photovoltage Spectroscopy"
J. Appl. Phys., 88, 6775, (2000).

J40. Y. Lubianiker, J. D. Cohen, G. Lubarsky, Y. Rosenwaks, J. Yang, and S. Guha, “Structural and Electronic Properties of Optimized a-Si:H Films”, J. of Non-Crys. Solid., 266-269, 253-257, (2000).

J39. R. Shikler, and Y. Rosenwaks, “Kelvin Probe Force Microscopy Using Near-field Optical Force Sensors”, Appl. Surf. Sci., 157, 256-262 (2000).

J38. N. Ashkenasy, M. Leibovitch, Y. Rosenwaks, Y. Shapira, K. W. J. Barnham,
J.Nelson,  J.Barnes,  "GaAs/AlGaAs Single quantum well p-i-n structures: A surface photovoltage study", J. Appl. Phys., 86, 6902, (1999).

J37. Shalish, L. Kronik, G. Segal, Y. Rosenwaks, Y. Shapira, U. Tisch, J. Salzman "Yellow luminescence and related deep levels in unintentionally doped GaN films" , Phys. Rev. B 59, 9748, (1999).

J36. R. Cohen, L. Kronik, A. Shanzer, D. Cahen, L. Aimin, Y. Rosenwaks, J. K. Lorenz, and A. B. Ellis “Molecular Control over Semiconductor Surface Electronic Properties: Dicarboxylic Acids on CdTe, CdSe, GaAs, and InP”, J. Am. Chem. Soc., 121 10545-10553 (1999).

J35. T. Meoded, R. Shikler, N. Fried, and Y. Rosenwaks, “Direct Measurement of Minority Carrier Diffusion Length using Atomic Force Microscopy”, Appl. Phys. Lett., 75, 2435-2437 (1999).

J34. L. Aimin, and Y. Rosenwaks, “Doping Dependence of Carrier Lifetime in InP Single Crystals: Radiative versus Nonradiative Recombination”, J. Appl. Phys. 86, 430-437 (1999). 

J33. R. Shikler, T. Meoded, N. Fried, and Y. Rosenwaks, “Two Dimensional Surface Band Structure of Operating Semiconductor Devices”, J. Appl. Phys. 86, 107-113 (1999).

J32. M.Maharizi, O.Segal, E.Ben-Jacob, Y.Rosenwaks, T.Meoded, N.Croitoru and A.Seidman, “Physical properties of a:DLC films and their dependence on parameters of deposition and type of substrate”, Diamond and Related Materials, 8, 1050-1056 (1999).

J31. R. Shikler, T. Meoded, N. Fried, and Y. Rosenwaks, “Potential Imaging of Operating Light Emitting Devices using Kelvin Force Microscopy”, Appl. Phys. Lett, 74, 2972-2974 (1999).

J30. R. Cohen, V. Lyahovitskaya, E. Poles, A. Liu, and Y. Rosenwaks, “Unusually Low Surface Recombination and Long Bulk Lifetime in CdTe Single Crystals”, Appl. Phys. Lett., 73, 1400-1402, (1998).

J29. S. J. Diol, E. Poles, Y. Rosenwaks, and R. J. D. Miller “Electron Transfer Dynamics at   GaAs Surface Quantum Wells”, J. Phys. Chem.  102, 6193-6201, (1998).

J28. R. Cohen, S. Bastide, D. Cahen, J. Libman, A. Shanzer, and Y. Rosenwaks, “Controlling Surfaces and Interfaces of Semiconductors Using Organic Molecules”, Optical Materials, 9, 394-400, (1998).

J27. Y. Rosenwaks, “Microsphere Electron Multiplier applicability to the time-correlated photon-counting ”, Rev. Sci. Instr., 68 , 2911-2912 (1997).

J26. Y. Rosenwaks, X. Li, and T. J. Coutts, "Characterization of heat Treated ITO/InP Solar Cells", J. Vac. Sci. Tech. A 15, 2354-2358 (1997).

J25. E. Poles, D. Huppert, and Y. Rosenwaks, “A Study of Super Bandgap Time Resolved Luminescence in InP”, J. Semi. Sci. Tech., 12 , 1252-1256 (1997).

J24. R. Cohen, S. Bastide, D. Cahen, J. Libman, A. Shanzer and Y. Rosenwaks, “Controlling Electronic Properties of CdTe by Adsorption of Dicarboxylic Acid Derivatives: Relating Molecular Parameters to Band Bending and Electron Affinity Changes", Advan. Mater. 9, 746-749 (1997).

J23. E. Poles, S.Y. Goldberg, B. Fainberg, D. Huppert, M. C. Hanna, and Y. Rosenwaks, "Super Bandgap Time Resolved Luminescence Study of Degenerate Electron-Hole Plasma in Thin  GaAs Epilayers", J. Appl. Phys., 80, 5129-5137 (1996).

J22. E. Poles, S. Y. Goldberg, , B. Fainberg, D. Huppert, M. C. Hanna, and Y. Rosenwaks, “The Effects of Carrier Transport on the Photoluminescence of Degenerate Electron-Hole Plasma in GaAs Epilayers", Appl. Surf. Sci. 106, 457-465 (1996).

J21. Y. Rosenwaks, B. R. Thacker, and A.J. Nozik, "The GaAs/GaInP2 Heterojunction for Studying Photoinduced Charge Transfer Processes", Appl. Surf. Sci. 106, 396-401 (1996).

J20. N. Bachrach-Ashkenasy, L. Kronik, Y. Shapira, Y. Rosenwaks, M. C. Hanna, M. Leibovitch, and P. Ram, “Surface Photovoltage Spectroscopy of Quantum Structures", Appl. Phys. Lett., 68, 879-881 (1996).

J19. D.J.Arent, S. S. Kocha, M.W. Peterson, Y. Rosenwaks, E. Grunbaum, and J.A.Turner, "Steady-State and Time-Resolved Luminescence Studies of Strained (Al,Ga,In)AsP/Ga0.52In0.48P Heterointerfaces", in “Wide Bandgap Semiconductors and Devices”  Electroch. Soc. Proc. Vol. 95-21, 285-292 (1995).

J18. Y. Rosenwaks, B. R. Thacker, K. Bertness, and A. J. Nozik, "Ideal Behavior at Illuminated Semiconductor-Liquid Junctions", J. Phys. Chem. (Letters Section), 99, 7871-7874 (1995).

J17. S.S. Kocha, M. W. Peterson, A. J. Nelson, Y. Rosenwaks, D. Arent, and J. Turner, "Investigation of Chemical Wet-Etch Surface Modification of GaInP2 using Photoluminescence, XPS, Capacitance measurements, and Photocurrent Spectroscopy", J. Phys. Chem., 99, 744-749 (1995).

J16. Y. Rosenwaks, B. R. Thacker, R. K. Ahrenkiel, A. J. Nozik, and I. Yavneh, "Photogenerated Carriers Dynamics Under the Influence of Electric Fields in III-V Semiconductors", Phys. Rev. B, 50, 1746-1754 (1994).

J15. Y. Rosenwaks, B. R. Thacker, and A. J. Nozik, R. J. Ellingson, K.C. Burr, and C. L. Tang, "Femtosecond Carrier Dynamics at InP/Liquid Interfaces in the Presence of Electric Fields" in "Ultrafast Phenomena IX", P. Barbara and W. Knox editors, Springer Verlag, Berlin, 409-411 (1994).

J14. Y. Rosenwaks, B. R. Thacker, A. J. Nozik, R. J. Ellingson, K.C. Burr, and C. L. Tang, "Ultrafast Photoinduced Electron Transfer Across Semiconductor-Liquid Interfaces in the Presence of Electric Fields", J. Phys. Chem. (Letters Section) 98, 2739-2741 (1994).

J13. Y. Rosenwaks, A. J. Nozik, and I. Yavneh, "The Effect of Electric Fields on time-resolved photoluminescence spectra in Semiconductors", J. Appl. Phys., 75, 4255-4257 (1994).

J12. Y. Rosenwaks, B. R. Thacker, A. J. Nozik, Y. Shapira, and D. Huppert, "Recombination Dynamics at InP/Liquid Interfaces", J. Phys. Chem., 97, 10421-10429 (1993).

J11. Y. Rosenwaks, M. Hanna, D. H. Levi, D. M. Szmyd, R. K. Ahrenkiel, and A. J. Nozik, "Hot Carrier Cooling in GaAs: Quantum Wells vs Bulk", Phys. Rev. B, 48, 14675-14678 (1993).

J10. Y. Rosenwaks, B. R. Thacker, R. K. Ahrenkiel, and A. J. Nozik, "Electron Transfer Dynamics at p-GaAs/Liquid Interfaces", J. Phys. Chem. (Letters Section), 96, 10096-10098 (1992).

J9. Y. Rosenwaks, Y. Shapira, and D. Huppert, "Picosecond time-resolved luminescence studies of surface and bulk recombination processes in InP", Phys. Rev. B, 45, 9108-9119 (1991).

J8. Y. Rosenwaks, D. Huppert, and Y. Shapira, "Evidence for low surface recombination velocity on p-InP", Phys. Rev. B, 44, 13097-13100 (1991).

J7. Y. Rosenwaks, Y. Shapira, and D. Huppert, "Surface Recombination Velocity at InP Interfaces", in "Properties of InP", J. Sears editor, INSPEC, IEE, London and New York, 328-331, (1991).

J6. P. Besler-Podorowsky, D. Huppert, Y. Rosenwaks, and Y. Shapira, "Picosecond Time Resolved Luminescence Study of n-CdSe Single Crystals: Comparison with CdS", J. Phys. Chem., 95, 4370-4373 (1991).

J5. Y. Rosenwaks, Y. Shapira, and D. Huppert, "Metal Reactivity Effects on the Surface Recombination Velocity at InP Interfaces", Appl. Phys. Lett., 57, 2552-2554 (1990).

J4. Y. Rosenwaks, L. Burstein, Y.Shapira, and D. Huppert, "Effects of Reactive versus Unreactive Metals on the Surface Recombination Velocity at CdS and CdSe (1120) Interfaces", Appl. Phys. Lett., 57, 458-460 (1990).

J3. Y. Rosenwaks, Y. Shapira, and D. Huppert, "Surface Recombination Velocity of CdS (1120) Interfaces with Metals", Vacuum, 41, 1009-1011 (1990).

J2. Y. Rosenwaks, L. Burstein, Y. Shapira, and D. Huppert, "Studies of Surface Recombination Velocity at Cu/CdS (1120) Interfaces", J. Phys. Chem., 94, 6842-6847 (1990).

J1. Y. Rosenwaks, A. Sher, and A. Zussman, "Wave Interference Effects in LPE Layers of Hg1-xCdxTe", Thin Solid Films, 169, 24 -34 (1988).