of Electrical Engineering Physical Electronics
The Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University,
Ramat Aviv 69978, ISRAEL
Department secretary: 972-3-640-8765
Advanced Laboratory for Electronic
Supported by Intel Corp. (Israel)
Acquaint the students of the semiconductor device track with both manufacturing and characterization methods providing hands-on experience with industrial and research techniques
1. Target a low number
of participants per student group to provide hands-on experience for every
2. Include versatile processing technology, including metallization for Schottky and Ohmic contacts, oxidation for MOS capacitors on silicon and other devices.
3. Offer various characterization techniques used by industry at different levels of device processing
4. Review the physical background of common semiconductor device processing and characterization techniques.
Mtg. 1 - Introductory
The student will receive the lab manuals, an overview of lab activity and requirements, safety instructions, and will be assigned a group.
Mtg. 2 - Conductivity
Purpose: acquiring basic methods of conductivity characterization
Method: the student will be provided with ready-made devices and samples and will apply four-point probe, hot probe, and Hall effect to characterize conductivity type and magnitude.
Mtg. 3 - Metallization
Purpose: basic considerations of metal choice, deposition methods, defining contacts using
photolithography and etching
Method: the student will prepare Si and oxidized Si wafers for deposition and will deposit aluminum layers using ion beam sputtering in ultra-high vacuum. Afterwards, the students perform lithography and etching procedures (in the clean room).
Mtg. 4 - Annealing
and formation of an Ohmic contact
Purpose: Study the effect of post-deposition annealing on the metal-semiconductor junction transport as well as the dependence of the Ohmic characteristics on the annealing duration.
Method: The contacts, previously defined by lithography and etching, will be heat-treated in several steps, following each the contact resistivity will be assessed.
Mtg. 5 - Schottky diode
Purpose: Characterization of Schottky diode parameters.
Method: I-V and C-V methods will be used to characterize the Schottky diode contacts previously defined using lithography and etching.
Mtg. 6 - MOS capacitor
Purpose: C-V and I-V characterization of MOS capacitors. Understanding the effect of interface charges on the capacitor characteristics.
Method: I-V and C-V measurements at various frequencies, in the dark and under illumination, for various contact areas.
Mtg. 7 - MOS capacitor
Purpose: C-V characterization of MOS capacitors in deep depletion regime.
Mtg. 8- MOS Transistor
Purpose: I-V Characteristics of a MOS transistor.
Method: I-V measurements of a ready-made MOSFET transistor and characterization of its small and large signal equivalent circuits.
Mtg. 9 - A visit to
one of the local microelectronics manufacturers (Intel).
Stuff members to contact for details
|Prof. Yoram Shapira||Tel. firstname.lastname@example.org|
|Dr. Arie Ruzin||Tel. email@example.com|
|Yigal Zidon||Tel. firstname.lastname@example.org|
|Tamara Baksht||Tel. email@example.com|
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