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General Description |
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RIE O2/SF6 SU-8 etching through nickel mask |
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Objective: |
Author: Itsik Kalifa |
Date: 22.11.04 |
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Comments: |
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Process |
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RF |
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200w |
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Reflected |
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0w |
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PlasmaTemperature |
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10c |
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Gas 1-O2 |
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50sccm |
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Gas 2-SF6 |
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2sccm |
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Gas 3-Ar |
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0sccm |
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Chamber Pressure |
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50mT |
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General Description |
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Etching Rate |
0.4 mm/min |
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