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SiO2/Si3N4 Sputtering |
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Objective: Passivation |
Author: Moti Ben-David |
Date: 19/12/04 |
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Comments: |
Sputtering MRC 8620 |
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Process |
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Pump |
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Fore Vacuum |
300mTorr |
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High Vacuum |
3e-6 Torr |
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SiO2 Sputtering |
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Pressure on sputter |
4e-4 Torr |
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Head |
3 |
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Gas |
Ar (6.4e-4 Torr) |
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FWB |
630 w |
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REF |
90 w |
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UP |
2.3 kV |
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Input |
98(30) |
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Bias |
---- |
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Load |
91(15) |
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Time |
25 min |
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Thickness |
2000 Ả (78 Ả/min) |
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Au Sputtering |
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Pressure on sputter |
1e-3 Torr |
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Head |
1 |
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Gas |
Ar (4.2e-4 Torr) + N2 (6.4e-4 Torr – mfc set 0.05) |
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FWB |
500 w |
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REF |
100 w |
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UP |
2.1 kV |
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Input |
95(10) |
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Bias |
---- |
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Load |
90(66) |
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Time |
42 min |
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Thickness |
4000 Ả (94 Ả/min) |