Publications

Below is a partial list of my publications on the subject:
 

  • I. Goldfarb, P.T. Hayden, J.H.G. Owen and G.A.D. Briggs,

"Nucleation of “hut” pits and clusters during gas-source MBE in in-situ scanning tunneling microscopy",
Phys. Rev. Lett. 78, 3959-3962 (1997).

  • I. Goldfarb, P.T. Hayden, J.H.G. Owen and G.A.D. Briggs,

"Competing growth mechanisms of Ge/Si(001) coherent clusters",
Phys. Rev. B 56, 10459-1068 (1997).

  • I. Goldfarb, J.H.G. Owen, P.T. Hayden, D.R. Bowler, K. Miki and G.A.D. Briggs,

"Gas-source growth of group IV semiconductors 3: Nucleation and growth of Ge/Si(001)"
, Surf. Sci. 394, 105-118 (1997).

  • I. Goldfarb, J.H.G. Owen, D.R. Bowler, C.M. Goringe, P.T. Hayden, K. Miki, D.G. Pettifor and G.A.D. Briggs,

"In-situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001)"
, J. Vac. Sci. Technol. A. 16, 1938-1943 (1998).

  • I. Goldfarb and G.A.D. Briggs,

"Advances in Germanium-Silicon Heteroepitaxy: In-Situ STM/RHEED Studies"
, invited review paper in Recent Res. Devel. In Mat. Sci. 1, 189-213 (1998).

  • I. Goldfarb and G.A.D. Briggs,

"The effect of mismatch strain on Stranski-Krastanow transition in epitaxial GexSi1-x/Si(001) gas-source growth",
J. Cryst. Growth. 198-199, 1032-1038 (1999).

  • I. Goldfarb and G.A.D. Briggs,

"Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces",
Surf. Sci. 433-435, 449-454 (1999).

  • I. Goldfarb and G.A.D. Briggs,

"Reactive deposition epitaxy of CoSi2 nanostructures on Si(001): Nucleation and growth, and evolution of dots during anneal",
Phys. Rev. B. 60, 4800-4809 (1999).

  • I. Goldfarb and G.A.D. Briggs,

"Self-assembled metal-semi-conductor compound nanocrystals on Group IV semiconductor surfaces",
Surf. Sci. 454-456, 837-841 (2000).

  • S.D. Kenny, I. Goldfarb, E. Akhmatskaya, G.A.D. Briggs,

"Surface reconstructions on the (100)CoSi2 surface",
Surf. Sci. 465, 259-265 (2000).

  • I. Goldfarb and G.A.D. Briggs,

"Surface studies of phase formation in Co-Ge system: reactive deposition epitaxy vs. solid phase epitaxy",
J. Mater. Res. 16, 744-752 (2001)

  • .R.E. Tanner, I. Goldfarb, M.R. Castell, and G.A.D. Briggs,

"The evolution of Ni nanoislands on the rutile TiO2(110) surface with coverage, heating and oxygen treatment",
Surf. Sci. 486(3), 167-184 (2001).

  • I. Goldfarb, L. Banks-Sills, R. Eliasi, G.A.D. Briggs,

"Finite Element Analysis of CoSi2 nanocrystals on Si(001)",
Interface Science 9, 433-439 (2001).

  • I. Goldfarb and G.A.D. Briggs,

"Analysis of complex heterogeneous surfaces by bias-dependent scanning tunneling microscopy and spectroscopy"
Mat. Sci. Eng. B. 91-92, 115-119 (2002).

  • I. Goldfarb, L. Banks-Sills, R. Eliasi, G.A.D. Briggs,

“Finite Element Analysis of CoSi2 nanocrystals on Si(001)”,
Interface Science 10, 75-81 (2002).

  • I. Goldfarb and G.A.D. Briggs,

“Analysis of complex heterogeneous surfaces by bias-dependent scanning tunneling microscopy and spectroscopy”,
Mat. Sci. Eng. B. 91-92, 115-119 (2002).

  • I. Goldfarb and G.A.D. Briggs,

“STM-controlled growth of cobalt-semiconductor compounds”,
J. Vac. Sci. Technol. B 20, 1419-1426 (2002).

  • I. Goldfarb, J.L. Azar, A. Grisaru, E. Grünbaum, M. Nathan,

“Molecular beam epitaxy of Ge on GaAs(001) and Si capping”,
J. Appl. Phys. 93, 3057-3062 (2003).

  • I. Goldfarb,

“CoSi2 surface phase separation into self-assembled lateral multilayers”,
Appl. Phys. Lett. 82, 1185-1187 (2003).
Note: this paper has also been selected for the March 3, 2003 issue of the Virtual Journal of Nanoscale Science & Technology,
that covers a focused area of frontier research.

  • I. Goldfarb,

“Synthesis of ultrathin semiconducting iron silicide epilayers on Si(111) by high temperature flash”,
Surf. Sci. (Lett.) 554, L87-L93 (2004).

  • I. Goldfarb, L. Banks-Sills, R. Eliasi,

“Si-capping of Ge nanohuts on Si(001) analyzed by scanning tunneling microscopy and the finite element method”,
Appl. Phys. Lett. 85, 1781-1783 (2004).

  • I. Goldfarb, S. Grossman, G. Cohen-Taguri, M. Levinshtein,

“ Scanning tunneling microscopy of titanium silicide nanoislands ”,
Appl. Surf. Sci. 238, 29-35 (2004).

  • I. Goldfarb,

“ Effect of strain on the appearance of subcritical nuclei of Ge nanohuts on Si(001) ”,
Phys. Rev. Lett. 95, 025501-4 (2005).

  •  I. Goldfarb, G. Cohen-Taguri, S. Grossman, M. Levinshtein,

“ Equilibrium shape of titanium silicide nanocrystals ”,
Phys. Rev. B 72, 075430 (2005).

  •  I. Goldfarb, S. Grossman, G. Cohen-Taguri,

“ Evolution of epitaxial titanium silicide nanocrystals as a function of growth method and annealing treatments ”,
Appl. Surf. Sci. 252, 5355 (2006).

  • I. Goldfarb, L. Banks-Sills, R. Eliasi,

“ Is the elongation of Ge huts in a low-temperature regime really governed by kinetics? ”,
Phys. Rev. Lett. 97, 206101 (2006).
Note: this paper has also been selected for the November 27, 2006 issue of the Virtual Journal of Nanoscale Science & Technology, that covers a focused area of frontier research.

  • I. Goldfarb,

“ In-plane and out-of-plane shape transitions of heteroepitaxially self-assembled nanostructures ”,
Surf. Sci. 601, 275, 2756-2761 (2007).

  • I. Goldfarb,

“ Step-mediated size selection and ordering of heteroepitaxial nanocrystals ”,
Nanotechnology  18, 335304 (2007).

  • I. Goldfarb and M. Levinshtein,

“ Self-organization of cobalt-silicide nanoislands on stepped Si(111) as a function of growth method ”,
J. Nanosci. Nanotechnol. 8, 801-805 (2008).

  • G. Cohen-Taguri, M. Levinshtein, A. Ruzin, and I. Goldfarb,

“ Real-space identification of the CZT(110) surface atomic structure by scanning tunneling microscopy ”,
Surf. Sci. 602, 712-723 (2008).

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Last modified: Thu Jun 05  2008