Journal of Microwave Power
and Electromagnetic Energy (JMPEE) |
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TITLE |
Microwave
Power Rectification with Commercial Schottky
Barrier Diodes [PDF] |
AUTHORS |
A. C. Macpherson, E. D. Cohen, and M. Herndon 1969 4 4 278-287 |
YEAR |
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VOLUME |
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ISSUE |
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PAGES |
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Abstract The microwave rectification efficiency of several
commercially available Schottky barrier diodes was
measured between I and 7 GHz as a function of power input and dc load resistance.
The highest efficiency observed was 89 per cent with 0.6-watt power input at
1 GHz. For a higher-frequency diode, produced by the same manufacturer,
efficiencies of 83 and 68 per cent were observed at 4 GHz and 6.4 GHz
respectively with an input power of 100 mW. A
theory is developed in which diode losses in the back and forward direction are described by four parameters: the back
capacitance, the series resistance, the front resistance, and the
"knee" voltage. The diode is imbedded in a lumped circuit, and the
efficiency is calculated. The theoretical dependence of the efficiency on the
load resistance agrees quite well with the measurements, but the frequency
dependence is less satisfactory. |