Journal of Microwave Power and Electromagnetic Energy (JMPEE)
TITLE	Resist Ashing Using Surface-Wave-Produced Plasmas [PDF]
AUTHORS	K. Komachi and S. Kobayashi 1990 25 4 236-240
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Abstract A new type of plasma asher using surface microwaves propagating on a dielectric line is reported. The ashing process is achieved in a flowing afterglow discharge. A high ashing rate of 3.2 mm/min over a 5-inch wafer at 230ºC is obtained, using pure oxygen at pressures close to 130 Pa. Radiation damage on the substrate is minimized by operating in a flowing after glow where the ion current on the wafer is barely detectable. Key Words: Plasma, Ashing, Surface wave, Microwave, Dielectric line, Shower head, Photoresist, Ion current, Brightness temperature.