Journal of Microwave Power and Electromagnetic Energy (JMPEE)
TITLE	Dielectric Property Measurement of Polycrystalline Silicon at High Temperatures [PDF]
AUTHORS	A. Baysar, J. Kuester and S. El-Ghazaly 1991 26 3 145-155
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Abstract The cavity technique based on frequency tuning was used to measure dielectric properties (dielectric constant, loss factor and loss tangent) of high purity polycrystalline particulate silicon obtained from two different sources. The dielectric properties were measured as a function of temperature (23^oC to 650^oC) and particle size (30 – 200 mesh range). The measurements were taken as frequencies between 995 MHz to 977 MHz. The dielectric constant increased sharply between 150^oC to 350^oC. No significant change was observed above 350^oC for all samples. The loss factor initially increased with temperature reaching a maximum at about 240^oC and 280^oC for the two sample sources and then decreased at higher temperatures for all samples. Larger particle size samples went through a minimum in the 460^oC to 470^oC range. The loss tangent followed a similar trend as the loss factor but the maximums were observed at 250^oC and 200^oC, respectively. Key Words: Polycrystalline silicon, Dielectric constant, Loss factor, Loss tangent.