Journal of Microwave Power and Electromagnetic Energy (JMPEE)
TITLE	Microwaves as an Energy Source for Producing β-SiC [PDF]
AUTHORS	J. Anguilar, J. Rodriguez and M. Hinojosa 2001 36 3 169-177
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Abstract This work describes the production of silicon carbide using microwaves as the energy source, which was supplied by means of variable power, up to 2000 Watts, magnetron operating at 2.45 GHz. The obtained samples were analyzed by means of X-ray diffraction and observed with electron microscopy (SEM). Temperatures achieved were around 2000°C, which is the upper limit for the β-SiC growth regime, before getting other SiC poly types. Analysis of different portions of the sample showed that β-SiC was the only formed compound, although free Si02 and graphite were also present. Observations made by SEM demonstrated different crystal growth regime, meaning that thermal conditions were not totally uniform. The amount of β-SiC found and the relative simplicity of the device prove that production of this material from silica and graphite is possible by applying microwaves as an energy source. Key Words: Silicon carbide, SiC