Journal of Microwave Power and Electromagnetic Energy (JMPEE)
TITLE	An Examination of Athermal Photonic Effects on Boron Diffusion and Activation During Microwave Rapid Thermal Processing [PDF]
AUTHORS	C. J. Bonifast, K. Thompson, J.H. Booske and R. F. Cooper 2008 42 1 23-34
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Abstract This work examines the role of 672 nm optical illumination on the diffusion and activation of B in Si as a function of various factors. The factors studied include length of anneal, maximum temperature of anneal, type of co-implanted and pre-amorphizing species and ambient oxygen concentration. The anneal conditions fell into one of three categories: (I) high-temperature (>900°C) spike and ID-second anneals; (2) low temperature (550°C) 3D-minute anneals; and (3) room-temperature long-term "anneals". Implanted species include implants, pre-amorphized B-only implants, and pre-amorphized implants. Finally, the ambient oxygen concentration was varied from atmospheric pressure to l00 ppm. The results show that illumination: (1) affects the diffusion of B on spike anneal time frames,' (2) has limited effect on diffusion over ID-second time frames; and (3) fails to enhance the activation of B during low-temperature solid phase epitaxy and at room temperature. Additionally, illumination has no effect on B-diffusion when oxygen is present in ambient concentrations but does show an effect when the presence of oxygen is restricted. Finally, the presence of F affects both the net diffusion of B in Si and the relative effect of illumination on the diffusion of B. Keywords: Activation, diffusions, illumination, microwave, rapid thermal processing