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Journal of Microwave Power
and Electromagnetic Energy (JMPEE) |
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TITLE |
Microwave Heating Characteristic of Multilayered
Structures in a Single-Mode Cavity [PDF] |
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AUTHORS |
Ziping
Cao, Zhanjie Wang, Noboru Yoshikawa, Shoji
Taniguchi 2009 43 1 23-26 |
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Abstract In
this study, nonconductor
(PZT), semiconductor (Si) and conductor (Pt/Ti) whose permittivity and
permeability are distinctive are prepared into various multilayered
structures for exploring the heating behavior of microwave (2.45Hz) in a
single-mode cavity. The heating efficiency of the semiconductor and conductor
was much higher at the maximum of H field than that of E field. At the H maximum, the Si layer was useful to generate
high temperature and the Pt/Ti accelerated the heating rate. At the E maximum, the Si layer was also in favor of
obtaining high temperature, but the Pt/Ti layer partially suppressed the
microwave heating. The effect of PZT on the heating processing was not
obviously observed at
the maximum of both H and E fields. Key Words: Microwave
heating, single-mode cavity, multilayered structure, ferroelectric thin
films, heating mechanism |
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