RTP-CVD Cluster Tool - Integra III (by STEAG Inc.)

Features: The Integra III has an Open architecture (SEMI/MESC compatible). It is designed for single wafer handling for 100mm-200mm wafers. Two vacuum cassette load locks and a slow pump and vent cycles (for particle control) are available. A primary power distribution enables up to 3 complete process modules and pumps.It has easy-to-interface communication with SEMI/MESC protocol and SECS II on LAN. Installation in a cleanroom can be performed by Though-the-wall configuration or as a standalone. Staging stations for wafer orientation and cooling are also available.

ICP Etcher - SLR 770 (by Plasma-Therm Inc.)

Features: A 6"/8" diameter inductive coupled plasma etch system, the Plasma Therm shuttlelock SLR 770 is configured with a load lock capable of handling 3" to 8" wafers. The microprocessor control allows the user to select from four etch gases for silicon etching. It provides deep silicon trench etching through Bosch florine-based process. A full range of standard etch and deposition processes are available for all levels of MEMS device fabrication.

Profilometer - Alphastep 500 (by KLA-Tencor)

Mask Alligner - MJB-3 Standard (by Karl-Suss)

Plasma Etcher - m-Etch (by Plasma Lab)

Inspection Microscope - MX-40 (by Olimpus)

Ion Beam Sputtering System - Millatron IV (by CSC)

RF Sputtering System - ??? (by MRC Inc.)

Scanning Tunneling Microscope - Nanoscope II (by DI)

e-beam evaporator (Custom made)

Reactive Ion Etcher - NE 860 (by Nextral)

Features: Reactive Ion Etcher Nextral 860 is a High Density Plasma reactor (HDP) capable of dielectric etching for frontside deprocessing and very fast etching for backside silicon thinning of packaged dies while maintaining full electrical functionality. In addition, the Nextral 860 HDP achieves excellent etch uniformity on 200 mm wafers.

X-Ray Chemical Analysis - mEX 5000 (by JVAR Inc.)

Spin processor - WS - 400 (by Laurell Corp.)

Ellipsometer - M-2000 (by J.A.Woolam)

Features: The J.A. Woollam M-2000® D spectroscopic ellipsometer combines a rotating compensator design with CCD-array technology. Very fast measurement speed - at least 390 wavelengths in less than 1 second. Typical measurement times of a couple seconds make the M-2000 ideal for:
-Ex-situ mapping.
-In-situ process and control.