|
|
Prof.
|
Research Interests:
My research interests are in the field of surface
science, in general, nanostructures in particular, and related phenomena, such
as adsorption, desorption, diffusion, segregation, nucleation and growth, phase
transitions, self-assembly and self-organization, etc. These surface
processes play a key role in epitaxial and heteroepitaxial
film growth, heterogeneous catalysis, and MEMS technology. For example, I
have been exploring the links between strain relaxation processes and
surface/interface energies, and the morphological evolution of surfaces growing
under strain, e.g., self-assembly of nanodots in heteroepitaxy. This fascinating phenomenon is not only
interesting from the fundamentally physical standpoint, but bears important
implications for semiconductor and other hi-tech industries. To investigate
such correlations I have been using real-time scanning tunneling microscopy
(STM) monitoring of nucleation and growth of nanostructures,
that appear on the strained surfaces during growth. A combination of
real-time atomic-resolution STM with high (RHEED) and low) LEED) energy
electron diffraction, is a very powerful method of probing the surface
morphology and crystallography.
For
example, Ge/Si(001) is
a classical example of a Stranski-Krastanow growth,
where the initial two-dimensional wetting layer grows pseudomorphically,
i.e.strained due to the 4.2% Ge/Si
lattice mismatch.
Fig. 1 
Fig. 1: These Ge/Si(001)
islands, otherwise known as "hut clusters" because of their hutlike shapes formed by {501} facets inclined at 11
degrees to the (001) bases, owing to their small dimensions and crystalline
perfection can exhibit the electron confinement properties of quantum dots.
CoSi2/Si(001) grows in a Volmer-Weber mode with a -1.2% mismatch, and is an example
of a layer under relatively small tension. In spite of these differences, the
early stage growth results in a very similar appearance of nanodots
in both cases. On the other hand, analysis of the late growth stages indicates
different growth mechanisms. Understanding the mechanisms underlying these
similarities and differences will allow to intentionally "engineer" the desired surface morphologies and
properties.
Fig.2
Fig. 2: Typical atomic-resolution STM
image of (221)-oriented CoSi2 nanocrystals, grown on Si(001) by reactive deposition epitaxy.
The image size is 35 nm X 35 nm.

Fig. 3 & 4: CoSi2 nanostructures at various stages of evolution (dots and wires)
"Semiconducting iron-silicide can be two-dimensionally grown on
Si(111), as an ordered hexagonal network".

"Complex interactions cause titanium-silicide
nanocrystals to develop
fascinating facets and shapes, when growing on Si(111)"
|
|
My new laboratory at
science.
My research group:
Yevgeni Roizinev (M.Sc), Lilach Bezalel
(M.Sc), Shirley Carmi (M.Sc),
Tzur Genosar (M.Sc., with
L. Banks-Sills), Gili Cohen-Taguri
(Ph.D), Oren Levy (Ph.D., with M. Nathan), Mario Levinstein (Technical Support).
Graduated: Gili Cohen-Taguri (M.Sc), Steve Grossman (M.Sc).

![]()
Return to:
[ Solid Mechanics | Engineering | Tel Aviv University ]
![]()
Please send comments or questions about this page to ilang@eng.tau.ac.il
Last modified: Mon Mar 25 2002